摘要
以滤纸和酚醛树脂为原料,经模压固化、碳化制备了具有三维不规则孔隙结构的多孔碳,再经过高温气相渗硅得到SiC/C复合材料。SEM结果表明,SiC/C复合体遗传了多孔碳前驱体的显微结构,同时SiC/C复合体具有较好的弯曲强度和气孔率。提出了一种简单的反应模型,对硅的气相反应和扩散过程进行了解释。
Porous carbon perform with three-dimensional irregular hole structure is fabricated by mold stac- king, drying and earbonization process using filter paper and phenolic resin as raw material and the SiC/C composites is obtained via gaseous silicon infiltration into the carbon perform. SEM observation reveals that the irregular intercon- nected microstructure of SiC/C composites inherite from carbon perform, at the same time, SiC/C composites have better bending strength and porosity. A sample reaction mechanism model is proposed for silicon gaseous reaction and diffusion.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第12期26-28,共3页
Materials Reports
基金
国家自然科学基金(50572084)
中央高校基本科研业务费专项资金(CHD2009JC143)
关键词
多孔碳
气相浸渍
SIC陶瓷
反应机理
porous carbon, gaseous infiltration, SiC ceramic, reaction mechanism
