摘要
研究了利用电子束反应蒸发技术梯度速率生长高迁移率In2O3:Mo(IMO)薄膜的微观结构、光学和电学性能。高纯度In2O3:MoO3陶瓷靶和O2作为源材料。首先,利用低沉积速率(约0.01nm/s)生长一层厚度约为30nm的IMO薄膜,作为缓冲层,其次,提高生长速率至0.04nm/s,高速率生长IMO薄膜,薄膜厚度约50nm。典型薄膜电阻率ρ约为2.5×10-4Ωcm,方块电阻Rs约为22.5Ω,载流子浓度n～5.8×1020cm-3,电子迁移率μ约为47.1cm2V-1s-1,可见光和近红外区域平均透过率约为80%。获得的IMO薄膜光电性能和直接利用低速率生长的薄膜特性相当或更好,并且极大地降低了薄膜生长时间。
Molybdenum-doped indium oxide（IMO） thin films are deposited at 350 ℃ with a growth rate varying in the range of 0.01-0.04 nm by the reactive electron beam vapor technique,and the microstructure,optical and electrical properties of the IMO films are investigated in detail.High purity In2O3：MoO3 ceramic targets and oxygen gas are used as source materials.Firstly,a 30 nm-thickness IMO buffer layer is fabricated on glass substrate by electron beam vapor deposition at the low growth rate of 0.01 nm/s.Secondly,a 50 nm-thickness IMO film is fabricated on the buffer layer via the same deposition technique at relatively higher growth rate of ～0.04 nm/s.The IMO film performances are as follows：resistivity,ρ,is ～2.5×10^-4 Ω cm,sheet resistance,Rs,is ～22.5 Ω,concentration,n,is ～5.8×10^20 cm^-3,electron mobility,μ is ～47.1 cm2V^-1s^-1,the average transmittance in the visible and near infrared region,Ta,is ～80%.The optical and electrical properties of the IMO films obtained with buffer layer are equivalent to/or superior to those of the films at low growth rate.In addition,the buffer-layer reduces effectively the process time.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第12期1599-1601,共3页
Journal of Optoelectronics·Laser
基金
国家"973"重点基础研究资助项目(2006CB202602
2006CB202603)
天津市应用基础及前沿技术研究计划资助项目(09JCYBJC06900)
天津市科技攻关资助项目(06YFGZGX02100)
