摘要
We analyze the two main factors causing non-uniformity of the etched macropore array first,and then a novel photoelectrochemical etching setup for large area silicon wafers is described.This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator.Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup.The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.
We analyze the two main factors causing non-uniformity of the etched macropore array first,and then a novel photoelectrochemical etching setup for large area silicon wafers is described.This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator.Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup.The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.
基金
Project supported by the Key Program of the National Natural Science Foundation of China(No.60532090).
