摘要
将MgF2超薄层嵌入有机电致发光器件(OLED)的空穴传输层NPB中,制备了结构为ITO/NPB(10nm)/MgF2(xnm)/NPB(20nm)/Alq3(30nm)/Al(30nm)的一系列OLED。测试结果表明,合适厚度的MgF2可有效降低器件启亮电压,提高器件的发光效率。MgF2厚度为0.5nm的器件启亮电压只有2.3V,较未嵌入MgF2器件降低2V;MgF2厚度为1.0nm的器件最大电流效率达到3.93cd/A,最大光功率效率达到1.58lm/W,较未嵌入MgF2器件分别提高95%和110%。
An ultrathin film of MgF2 is inserted into the hole transport layer NPB of the traditional OLEDs（organic electroluminescent devices）,the devices with the structure of ITO/NPB（10 nm）/MgF2（xnm）/NPB（20 nm）/Alq3（30 nm）/Al（30 nm） are fabricated.The results show that the MgF2 interlayer with suitable thickness can decrease the turn on voltage and increase the efficiency of the device.In this experiment,the turn on voltage of the device with 0.5 nm-thickness MgF2 layer is 2.3 V,which is 2 V lower than that of the OLED without MgF2 layer.The maximum luminous efficiency and power efficiency of the device with 1.0 nm-thickness MgF2 layer are 3.93 cd/A and 1.58 lm/W,respectively,which are increased by 95% and 110% compared with that of the OLED without MgF2 interlayer,respectively.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第5期652-654,共3页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(20671068
60976018)
教育部科学技术重点资助项目(207015)
山西省自然科学基金资助项目(2008011008)
太原市科技明星专项资助项目(07020401)
