摘要
在激光二极管端面连续抽运Nd:YAG激光器中,采用由射频磁控溅射技术和热处理制备的纳米Si镶嵌SiNx(nc-Si/SiNx)薄膜作为可饱和吸收体,实现了946 nm激光的被动调Q运转,同时采用三硼酸锂(LBO)晶体对946 nm光脉冲进行腔内倍频,获得了473 nm蓝光脉冲输出。当抽运功率为8.5 W时,输出的蓝光脉冲平均功率为120 mW,脉冲重复频率为23.8 kHz,脉冲宽度为45 ns,峰值功率为112 W,光-光转换效率为1.41%。实验还研究了蓝光脉冲平均功率、脉冲重复频率和脉冲宽度随抽运功率的变化。理论分析认为,nc-Si/SiNx薄膜对946 nm激光的双光子饱和吸收导致了Nd:YAG 946 nm激光器的被动调Q运转。
A film of nanocrystalline silicon embedded in SiNx（nc-Si/SiNx）was prepared by radio-frequency magnetron sputtering technique and thermal annealing.By using the film as a saturate absorber,a 946 nm laser with passive Q-switching was achieved in a laser diode（LD） continual end-pumped Nd：YAG laser and a 473 nm blue laser pulse was generated with intra-cavity frequency doubling of LiB3O5（LBO） crystal.At the pump power of 8.5 W,the Q-switched blue laser pulses with average power of 120 mW,pulse duration of 45 ns,repetition rate of 23.8 kHz and peak power of 112 W were obtained.The conversion efficiency from pump lasers to 473 nm blue laser pulses was 1.41%.The changes of average powers,pulse repetition rates and pulse duration of the blue laser pulses with pump powers were experimentally studied.Theoretical analysis showed that the two-photon saturate absorption at 946 nm laser pulse in nanocrystalline silicon embedded in SiNx films caused the passive Q-switching of Nd：YAG 946 nm lasers.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2010年第6期1564-1568,共5页
Chinese Journal of Lasers
基金
国家自然科学基金重点项目(60838003)
福建省自然科学基金(2009J01291)资助课题
关键词
激光技术
蓝光脉冲
纳米硅薄膜
被动调Q
腔内倍频
laser technique
blue laser pulse
nanocrystalline silicon film
passive Q-switching
in-cavity frequency doubling
