摘要
与常用电子陶瓷薄膜技术相比，ＭＯＣＶＤ技术具有薄膜化学成分、结晶结构和氧化程度易控制，沉积温度低，沉积速率高，薄膜的致密性、均匀性和台阶覆盖性好，可理想生长多组元和多层结构的功能金属氧化物薄膜，能直接由实验室转入规模生产及与硅的大规模集成工艺兼容等优点。应用自制设备及ＭＯＣＶＤ技术，分别在高掺杂硅片和有透明导电膜玻璃的基片上生长了ＴｉＯ２薄膜。测得的１ｍｍＡｕ圆点／ＴｉＯ２薄膜／ｐ＋－Ｓｉ衬底样品的Ｉ－Ｖ和Ｃ－Ｖ特性，清楚地给出了ＭＩＳ结构的行为。淀积在透明导电膜玻璃上的ＴｉＯ２薄膜有电致变色现象。
With MOCVD film technology, film chemical composition is easier to control, deposition temperature lower, deposition speed higher, deposited film more compact, homogenous and flat as compared with typical ceramic film formation technology Some TiO 2 thin films grew, with MOCVD system made in our laboratory, on high doped (100) Si wafer and on conductive film coated glass respectively The measured I V and C V characteristics clearly show MIS structure behavior of the samples of 1 mm Au dot/TiO 2 film/p + Si Those films deposited on conductive film coated glass have electrochromic phenomena (11 refs )
出处
《电子元件与材料》
CAS
CSCD
1999年第1期3-4,7,共3页
Electronic Components And Materials
