摘要
在Si和外延层之间使用一层薄金属层作为高效反射镜的所谓"镜面衬底",不但有助于提高芯片的出光效率,同时把键合温度降低到300℃以下。利用Au/In合金的方法,来实现用于高亮LED的Si片与AlGaInP四元外延片的键合。实验表明,在温度为250℃时,利用Au/In作为焊料,Si片与AlGaInP四元外延片可以实现比较好的键合,键合面可以达到60%。通过研磨减薄、X-ray测试和扫描电镜(SEM)测试得出键合面的界面特性,通过能谱分析得出键合面的物质分别为AuIn2和AuIn,实验测试得出此时Au的原子数占33.31%,In的原子数占36.64%。
Using a thin metal layer as a highly efficient reflector of so-called ＂mirror substrate＂ between the Si and the epitaxial layer,it can improve the efficiency of the chip out of light,and the bonding temperature can be dropped to below 300 ℃.By Au/In alloy method,the experiment on Si-AlGaInP bonding was carried out.The result shows that at the temperature around 250 ℃ to 300 ℃,using Au/In as a solder,Si wafer with the AlGaInP wafer can realize a better bonding,the bonding area reaches to 60%.Via thinning by grinding,the bonding interface properties are given from the measurement of X-ray and scanning electron microscopy（SEM）.From energy spectrum analysis,the bonding interface elements are obtained as AuIn2 and AuIn,and the experimental tests show that the atomic number of Au occupies 33.31%,while the atomic number of In is 36.64%.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第5期436-439,共4页
Semiconductor Technology
基金
江苏省科技项目(BG2007026)
扬州大学自然科学基金项目(2006XJJ02)
