摘要
模拟开关电源DC/DC模块内部电路为开关电源中的功率器件—垂直导电双扩散MOS(VDMOS)和肖特基二极管(SBD)—提供恒定电应力,并对其施加温度应力进行加速寿命试验。采用恒定电应力温度斜坡法(CETRM),对开关电源中功率器件VDMOS和SBD的可靠性进行评价;对其失效机理一致性进行分析,计算其失效激活能;并在失效机理一致的范围内外推正常使用条件下的寿命,为开关电源整体可靠性评价提供依据。
Internal circuit of DC/DC switching power supply module provides constant electronic stress for VDMOS and SBD. Accelerated life test was carried out by applying temperature stress. And reliability of power devices, VDMOS and SBD, was evaluated with constant electrical stress and temperature ramp stress method （CETRM）. The consistency of its failure mechanism was analyzed, and activation energy was calculated. Lifetime of power devices under normal operation was estimated in the consistent range of failure mechanism, which could be used as references for reliability estimation of DC/DC switching power supply.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第2期278-282,共5页
Microelectronics
