摘要
在有效质量近似下,用变分法研究了闪锌矿GaN/Al_xGa_(1-x)N单量子点中的类氢杂质态.结果表明量子点中的杂质位置和量子点结构参数(量子点高度H、半径R及Al含量x)对施主束缚能有很大的影响.当杂质位于量子点中心时,施主束缚能E_b有最大值.此外,施主束缚能E_b随着量子点高度H(半径R)的增大而减小,随着量子点中Al含量x的增大而增大.
Within the framework of the effective-mass approximation, hydrogenie impurity states con-fined in a cylindrical zinc-blende （ZB） GaN/AlxGa1-xN single quantum dot （QD） are investigated by means of a variational approach. Numerical results show that the donor binding energy is highly depend-ent on the impurity position and QD structural parameters （the QD height, radius and Al content x）. When the impurity is located at the center of the quantum dot, the donor binding energy Eb is largest.Moreover Eb is decreased with the increasing of the QD height （and radius） and increased with the increasing of Al content x.
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
2010年第1期173-176,共4页
Journal of Atomic and Molecular Physics
基金
国家自然科学基金(10674042)
河南师范大学2009年青年科学基金
关键词
量子点
类氢杂质态
施主
束缚能
quantum dot, hydrogenic impurity states, donor, binding energy
