摘要
本文报道了用改进的液相外延技术制作的ＩｎＧａＡｓＰ／ＧａＡｓ分别限制单量子阱激光器，将其端面分别蒸镀增透膜和高反膜后，激光器输出功率提高近１倍。用此ＬＤ端面泵浦Ｎｄ：ＹＡＧ激光器，当泵浦源输出２．７Ｗ时。
This paper reports the fabrication of InGaAsP/GaAs Single Quanlum Well(SQW) lasers with the revised LPE technology.When AR and HR films are cvaporated on to the respective cavity surfaces,the output power can almost be doubled.In the experiment,Nd:YAG laser was end pumped by the above mentioned laser diode with the input power of 2.7w(cw),cw output power of 700mW of the Nd:YAG laser has been obtained.
出处
《光电子．激光》
EI
CAS
CSCD
1998年第6期513-514,共2页
Journal of Optoelectronics·Laser
