摘要
给出了一种新的预估互补金属氧化物半导体器件(CMOS器件)空间低剂量率辐射效应模型,相对线性响应预估模型,该模型在预估CMOS器件低剂量率辐射效应方面更接近实际试验结果,且不同剂量率辐射试验结果证实了所建模型的正确性.最后利用新建模型对处于空间低剂量率环境下CMOS器件的敏感参数进行了预估.
A new model is presented to predict the radiation response for complementary metal oxide semiconductor （CMOS）devices at low dose rate in space environment. In comparison with the linear system response theory model, the prediction results for CMOS devices at low dose rate radiation by using the new model are more close to actually experiment data, and the experimental results for different dose rate of radiation verify the accuracy of the model. Finally, the radiation effects on sensitive parameters of CMOS devices at low dose rate in space environment are predicted by making use of the new model.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第3期1985-1990,共6页
Acta Physica Sinica
基金
国防预研基金(批准号:311060403)资助的课题~~
关键词
电离辐射
总剂量
低剂量率
预估方法
ionizing radiation
total dose
low dose rate
prediction method
