摘要
利用磁控溅射法,在Si(100)衬底上制备了不同厚度的非晶导电薄膜Ni-Al底电极,并采用直滴法、退火工艺和掩膜技术,首先制备了偏氟乙烯-三氟乙烯P(VDF-TrFE)共聚物铁电薄膜,并构架了Al/P(VDF-TrFE)/Ni-Al/Si铁电电容器异质结.采用X线衍射仪(XRD)、铁电测试仪(Precision LC unit)等测试手段对薄膜的性能进行了表征.结果表明:Ni-Al薄膜厚度对偏氟乙烯-三氟乙烯共聚物薄膜的漏电流产生较大影响,当厚度为36 nm时,其漏电流密度达到2.09×10-5A/cm2;所构架的Al/P(VDF-TrFE)/Ni-Al/Si电容器呈现2种漏电机理,在较低的电场范围内,电容器的导电机理为欧姆导电机理,在高电场下为界面肖特基导电机理.
Ni-Al films with different thicknesses used as the bottom electrode layers are prepared on Si（100） at room temperature by magnetron sputtering method, and P（VDF-TrFE） copolymer film is prepared by direct dripping method, which is followed by an annealing process to further obtain Al/P（VDF- TrFE）/Ni-Al/Si ferroelectric capacitor heterostructures through a shadow mask. Various techniques, such as X-ray diffraction （XRD）, ferroelectric tester （Precision LC unit） have been employed to characterize the microstructure and ferroelectric properties of the ferroelectric capacitors. It is found that thickness of Ni- Al film have a large effect on leakage current of P（VDF-TrFE） copolymer film. When the thickness of Ni- A1 film is 36 nm, leakage current density of P（VDF-TrFE） copolymer film is 2.09）〈 10^-5 A/cm^2. Leakage current mechanism of the Al/ P（VDF-TrFE）/Ni-Al/Si ferroelectric capacitor is further investigated, it is found that Al/P（VDF-TrFE）/Ni-Al/Si corresponds to Ohmic conduction behavior at low electric field and Schottky emission at higher electric field.
出处
《河北大学学报（自然科学版）》
CAS
北大核心
2010年第1期19-22,共4页
Journal of Hebei University(Natural Science Edition)
基金
河北省自然科学基金资助项目(E2008000620
E2009000207
08B010
E2009000210)
