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Effect of Channel Length and Width on NBTI in Ultra Deep Sub-Micron PMOSFETs 被引量:2

Effect of Channel Length and Width on NBTI in Ultra Deep Sub-Micron PMOSFETs
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摘要 The effects of channel length and width on the degradation of negative bias temperature instability (NBTI) are studied. With the channel length decreasing, the NBTI degradation increases. As tile channel edges have more damage and latent damage for the process reasons, the device can be divided into three parts: the gate and source overlap region, the middle channel region, and the gate and drain overlap region. When the NBTI stress is applied, the non-uniform distribution of the generated defects in the three parts will be generated due to the inhomogeneous degradation. With tile decreasing channel length, tile channel edge regions will take up a larger ratio to the middle channel region and the degradation of NBTI is enhanced. The channel width also plays an important role in the degradation of NBTI. There is an inflection point during the decreasing channel width. There are two particular factors: the lower vertical electric field effect for the thicker gate oxide thickness of the sha/low trench isolation (STI) edge and the STI mechanical stress effecting on the NBTI degradation. The former reduces and the latter intensifies the degradation. Under the mutual compromise of the both factors, when the effect of the STI mechanical stress starts to prevail over the lower vertical electric field effect with the channel width decreasing, the inflection point comes into being. The effects of channel length and width on the degradation of negative bias temperature instability (NBTI) are studied. With the channel length decreasing, the NBTI degradation increases. As tile channel edges have more damage and latent damage for the process reasons, the device can be divided into three parts: the gate and source overlap region, the middle channel region, and the gate and drain overlap region. When the NBTI stress is applied, the non-uniform distribution of the generated defects in the three parts will be generated due to the inhomogeneous degradation. With tile decreasing channel length, tile channel edge regions will take up a larger ratio to the middle channel region and the degradation of NBTI is enhanced. The channel width also plays an important role in the degradation of NBTI. There is an inflection point during the decreasing channel width. There are two particular factors: the lower vertical electric field effect for the thicker gate oxide thickness of the sha/low trench isolation (STI) edge and the STI mechanical stress effecting on the NBTI degradation. The former reduces and the latter intensifies the degradation. Under the mutual compromise of the both factors, when the effect of the STI mechanical stress starts to prevail over the lower vertical electric field effect with the channel width decreasing, the inflection point comes into being.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第3期262-265,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 60890191 and 60736033, the National Key Science and Technology Special Project under Grant No 2008ZX01002-002, and the National Key Technology R & D Program under Grant No 2007BAK25B03.
关键词 Electronics and devices Semiconductors Electronics and devices Semiconductors
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