摘要
研究了化学气相条件下金刚石在非均匀研磨硅基底表面及镜面基底和均匀研磨基底边缘及角域处的成核行为。发现ＣＶＤ金刚石成核不仅依赖于沉积区缺陷，更主要由缺陷的锐度决定，即缺陷加强ＣＶＤ金刚石成核的锐度效应。在对无序碳上ＣＶＤ金刚石成核研究的基础上，讨论了ＣＶＤ金刚石成核的机理，并由此阐明了各种表面预处理及负偏压等增强ＣＶＤ金刚石成核的微观过程。
Nucleation of diamond with hot filament chemical vapor deposition on the surface of non uniformly ground silicon substrate, and on the edge and corner area of uniformly ground and mirror silicon substrates is investigated. It was revealed that CVD diamond nucleation depends on the sharpness of the defects more than on the defects at the deposition area, which is called sharpness effect of defect enhancing CVD diamond nucleation. The CVD diamond nucleation on predeposited amorphous carbon is also investigated, and the mechanism of CVD diamond nucleation is discussed. The micro processes of diamond nucleation, enhanced by various surface pre treatment and negative bia voltage, are described.
出处
《材料开发与应用》
CAS
1998年第6期7-10,共4页
Development and Application of Materials
关键词
金刚石成核
锐度效应
成核机理
CVD
薄膜
Diamond nucleation Sharpness effect Nucleation mechanism Amorphous carbon
