摘要
半导体同位素电池由于其寿命长、集成性优良、环境适应性强等特点成为解决MEMS能源问题的理想手段。利用4H-SiC材料的宽禁带特性,制造了4H-SiC肖特基同位素电池。对电池的耗尽层厚度以及掺杂浓度进行了优化设计,对肖特基金属进行了选择。使用4mCi/cm2的63Ni作为同位素电池的放射源对制造的同位素电池进行了测试。测试结果表明,该同位素电池可以获得31.3nW/cm2的功率密度、0.5V的开路电压、3.13×10-8A/cm2的短路电流密度和1.3%的转换效率。将电池的输出特性和硅基的平板型、3D结构电池输出特性进行了比较,证明4H-SiC肖特基同位素电池能够获得较高的功率密度。电池的性能可通过提升势垒高度、提高工艺质量、更换同位素等方式得到提高。
A semiconductor betavoltaic battery provides a good solution to power supply of MEMS in terms of its long lifetime, easy integration and high environmental adaptability. With the wide band-gap of 4H-SiC, the 4H-SiC Schottky betavoltaic battery was fabricated. The depletion layer thickness and doping concentration were optimized, and the Schottky metal was chosen. The betavoltaic battery was fabricated and tested under the illumination of 4 mCi/cm263 Ni source. The results show that the obtained power density is 31.3 nW/cm2 with an open circuit voltage of 0. 5 V, a short circuit current density of 3.13 × 10^-8 A/cm： , and a conversion efficiency of 1.3%. The output performance of the battery was compared with those of Si based planar and 3D structure batteries. The comparison results reveal that the 4H-SiC Schottky betavoltaic battery can obtain higher power density. The performance of the 4H-SiC Schottky betavoltaic battery can be improved by some methods in the future, such as enhancement of the barrier height, improvement of the process quality, change of the type of the isotope, etc.
出处
《微纳电子技术》
CAS
北大核心
2010年第3期157-162,共6页
Micronanoelectronic Technology
基金
National High Technology Research and Development Programme of China(2006AA04Z338)
Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(706055)
