摘要
文章针对铜丝键合工艺在高密度及大电流集成电路封装应用中出现的一系列可靠性问题,对该领域目前相关的理论和研究成果进行了综述,介绍了铜丝球键合工艺、键合点组织结构及力学性能、IMC生长情况、可靠性机理及失效模式。针对铜丝球键合工艺中易氧化、硬度高等难点,对特定工艺进行了阐述,同时也从金属间化合物形成机理的角度重点阐述了铜丝球键合点可靠性优于金丝球键合点的原因。并对铜丝球键合及铜丝楔键合工艺前景进行了展望。
According to the reliability problems of copper wire bonding in fine-pitch and high current IC packaging, summarize the theory and experiment research in this field, describe the copper wire bonding process, micro- structure of the copper bonding and its mechanical performance, status of IMC growth, reliability mechanism and failure mode. As there are oxidization and hardness problems in copper wire bonding, introduce the special- ized technology to solve the problems. Expound the advantages of bonding reliability between copper Wire bonding and gold wire bonding in the aspect of IMC growth theory. Finally introduce the foreground of copper ball bonding and copper wedge bonding application.
出处
《电子与封装》
2010年第2期1-6,10,共7页
Electronics & Packaging
关键词
铜丝
键合工艺
可靠性
失效模式
Cu wire
ultrasonic ball bonding
reliability
failure mode
