摘要
阐述了纳米电子器件中1/f噪声的产生机理,分析了单电子晶体管1/f噪声产生的各种原因,并用介观效应的原理,揭示出宏观样品中产生1/f噪声的实质.最后,得出一种针对纳米单电子器件低噪声化处理的方法.
The reasons of existence for 1/f noise in nanoelectronics were explained; varies of reasons for 1/f noise were analyzed, and the principle of mesoscopics effect was applied to reveal the essence of real noise in macro - samples. Finally, single - electron devices for nanoelectronics low - noise method of treatment were put forward.
出处
《重庆文理学院学报（自然科学版）》
2010年第1期50-52,60,共4页
Journal of Chongqing University of Arts and Sciences
基金
四川文理学院科研项目(2007B03Z)
