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Lu_2O_3:Tb薄膜的制备、结构和发光性能 被引量:1

PREPARATION,STRUCTURE AND LUMINESCENCE PROPERTIES OF Lu_2O_3:Tb FILMS
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摘要 采用Pechini溶胶-凝胶法结合旋涂技术在单晶硅衬底上制备出了均匀、无裂纹的掺Tb3+的Lu2O3(Lu2O3:Tb)薄膜。用热重-差示扫描量热法分析了前驱体干凝胶在室温至1000℃下发生的热分解现象。利用X射线衍射和Fourier红外光谱和原子力显微镜研究了热处理温度对Lu2O3:Tb薄膜的晶相、化学组成和表面形貌的影响。结果表明:在550~1000℃间热处理的Lu2O3:Tb薄膜为多晶氧化镥立方结构,晶粒尺寸随温度升高而逐渐长大至30nm左右。在220nm紫外光激发下,Lu2O3:Tb薄膜呈现出较强的绿光发射,主发射峰分别位于542nm和551nm处。随着热处理温度的提高,Lu2O3:Tb薄膜中缺陷减少,发光强度增强。 Uniform and crack free Tb3+ doped lutetium oxide (Lu2O3:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique.The thermal decomposition behavior of the dried gel precursor from room temperature to 1 000 ℃ was analyzed by a thermogravimetry-differential scanning calorimetry.Effects of the heat-treatment temperature on the phase composition,structural characters and surface morphology of Lu2O3:Tb films were investigated by X-ray diffraction,Fourier transformed infrared spectroscopy and atomic force microscope.The results show that the films heat-treated between 550-1 000 ℃ have a Lu2O3 polycrystalline state with cubic structure,and its grain size grows to around 30 nm with the increasing of the temperature.The main luminescence emission peaks of Lu2O3:Tb films excited by a 220 nm light are located at 542 and 551 nm.With the raising of the annealing temperature,the defect in the Lu2O3:Tb films decreases and the luminescence emission intensity of films increases.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2010年第2期172-176,共5页 Journal of The Chinese Ceramic Society
基金 上海市自然科学基金(10ZR1411400) 2008年度高性能陶瓷和超微结构国家重点实验室开放基金(SKL200806SIC) 2008年上海大学创新基金资助项目
关键词 掺铽氧化镥薄膜 溶胶-凝胶法 形貌 发射光谱 terbium doped lutetium oxide film sol-gel method morphology emission spectra
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参考文献16

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