摘要
通过采用微机电系统（MEMS）和微声电子方法，研究了硅基片上横膈膜结构薄膜体声波谐振器（FBAR）。器件的串联谐振频率fs=2．75GHz。并联谐振频率fp=2．8GHz，插入损耗IL=-3．7dB，并联谐振频率品质因子Qp=260，有效机电耦合系数Keff^2=4．5％。
A thin film bulk acoustic resonator（FBAR）fabricated on Si substrate with membrane structure oy MEMS and micro-electro-acoustic technologies was studied. The tested device has a series resonant frequency fs of 2.75 GHz and a parallel resonant frequency fp of 2, 8 GHz. The insertion loss of -3.7 dB,the parallel resonant frequency quality factor （Q） of 260 and the efficient electromechanical coupling factor Keff^2 of 4.5% have been achieved.
出处
《压电与声光》
CSCD
北大核心
2010年第1期1-2,14,共3页
Piezoelectrics & Acoustooptics
