摘要
硅是最重要的半导体材料,在信息产业中起着不可替代的作用。但是硅材料也有一些物理局限性,比如它是间接带隙半导体材料,它的载流子迁移率低,所以硅材料的发光效率很低,器件速度比较慢。在硅衬底上外延生长其它半导体材料,可以充分发挥各自的优点,弥补硅材料的不足。本文介绍了硅衬底上的锗材料外延生长技术进展,讨论了该材料在微电子和光电子等方面的可能应用,重点介绍了它在硅基高速长波长光电探测器研制方面的应用。
Silicon is the most important semiconductor material and it is irreplaceable in the information industry.But Silicon also has some shortcomings,such as very lowluminescence efficiency and low device speed due to the indirect bandgap and low carrier mobility.Growing other semiconductors on Si substrate can take the advantages of the different semiconductors and improve the performance of the Si-based devices and integrated circuits.The progress of Ge growth on Si was introduced in the paper.The application of the Si-based Ge epitaxy layer was discussed,especially the application on Si-based high speed photodetectors operating at long wavelength.
出处
《中国集成电路》
2010年第1期71-78,共8页
China lntegrated Circuit
基金
"973"课题(2007CB613404)
国家自然科学基金项目(60676005)
"863计划"项目(2006AA03Z415)的资助
关键词
硅基
锗
外延
光电探测器
Si-based
Germanium
Epitaxy
Photodetector
