摘要
This paper reports that a novel yellow phosphor, LiSrBO3：Eu2＋, was synthesized by the solid-state reaction. Thc excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet （360 and 400 nm） and blue （425 and 460 nm） light, and exhibits a satisfactory yellow performance （565 nm）. The role of concentration of Eu2＋ on the emission intensity in LiSrBO3 is studied, and it is found that the critical concentration is 3 mol%, and the concentration self-quenching mechanism is the dipole-dipole interaction according to the Dexter theory. White light emitting diodes were generated by using an InGaN chip （460 nm or 400 nm） with LiSrBO3：Eu2＋ phosphor, the CIE chromaticity is （x = 0.341, y =0.321） and （x = 0.324, y = 0.318）, respectively. Therefore, LiSrBOa：Eu^2＋ is a promising yellow phosphor for white light emitting diodes.
This paper reports that a novel yellow phosphor, LiSrBO3：Eu2＋, was synthesized by the solid-state reaction. Thc excitation and emission spectra indicate that this phosphor can be effectively excited by ultraviolet （360 and 400 nm） and blue （425 and 460 nm） light, and exhibits a satisfactory yellow performance （565 nm）. The role of concentration of Eu2＋ on the emission intensity in LiSrBO3 is studied, and it is found that the critical concentration is 3 mol%, and the concentration self-quenching mechanism is the dipole-dipole interaction according to the Dexter theory. White light emitting diodes were generated by using an InGaN chip （460 nm or 400 nm） with LiSrBO3：Eu2＋ phosphor, the CIE chromaticity is （x = 0.341, y =0.321） and （x = 0.324, y = 0.318）, respectively. Therefore, LiSrBOa：Eu^2＋ is a promising yellow phosphor for white light emitting diodes.
基金
Project supported by the National Natural Science Foundation of China (Grant No. 50902042)
the Natural Science Foundation of Hebei Province, China (Grant No. E2009000209)
the Research Foundation fo Education Bureau of Hebei Province, China(Grant No. 2009313)
