摘要
以InC l3.4H2O和SnC l4.5H2O为原料制备溶胶前驱体,采用浸渍提拉法在S iO2玻璃表面制备透明带电的ITO薄膜。采用方块电阻测量仪、紫外/可见光分光光度计、扫描电子显微镜、X射线衍射仪等分析薄膜的物相结构、微观组织、导电性能及光谱特性。结果表明,薄膜的方块电阻与Sn掺杂量、提拉次数及热处理温度均有关。得到的最佳参数为Sn掺杂量10%(摩尔比)、5次提拉并干燥、500℃热处理1h(炉外空冷)。制得的最佳ITO薄膜方阻为240Ω/□,可见光平均透过率大于90%。
The ITO sol is prepared using chlorides of In and Sn as predecessors,and the ITO thin film is gained on slices by dip-coating method.The phase composition,microstructure,electric conductivity and optical transparent properties of the films are investigated by 4-probe instrument,UV-VIS spectrometer,SEM and XRD.The results indicate that sheet resistance of the film is related to tin atom quantities to be adulterated,dip-coating times and annealing temperature.The optimal parameters are Sn dopant at 10%,5 times dip-coating, and then 1h heat treatment at 500℃. The best square resistance of the ITO thin film is 240Ω/□ also the average visible light transparency is over 90%.
出处
《有色金属》
CSCD
北大核心
2009年第4期51-55,共5页
Nonferrous Metals
基金
国家自然科学基金资助项目(90305026)
