摘要
为了实现氧化锌薄膜的p型掺杂,从而制备氧化锌同质p-n结,采用化学气相沉积法,以二水合醋酸锌为前驱,醋酸铵为氮源,在氧气氛下制备了氮掺杂的p型氧化锌薄膜.利用X射线光电子能谱和X射线衍射分析,表征了氧化锌薄膜的化学成分.通过霍尔效应测量证实了薄膜的p型导电特性.探讨了制备过程中温度、压强、源物质等条件对反应产物的影响,研究了薄膜的光学和电学特性,得到了p型氧化锌薄膜的吸收光谱和光致发光光谱,以及氧化锌p-n结的伏安特性曲线.
P-type ZnO films were synthesized via chemical vapor deposition method by using zinc acetate dihydrate and ammonium acetate as solid-state sources. X-ray photoelectron spectroscopy and X-ray diffraction spectroscopy were employed to analyze the composition of p-type ZnO films, and their conductive type was characterized by the measurement of Hall effect. Influences of the growth temperature, the vapor pressure and the source material on electric properties of the films were investigated. The spectra of optical absorption and photolumineseence of ZnO films were obtained, and the I - V behavior of ZnO p - n homojunctions was discussed.
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2009年第5期686-690,695,共6页
Materials Science and Technology
基金
国家重点基础研究发展规划项目(2001CB610503)
国家自然科学基金资助项目(60471007
60471008
90406024
50672002)
北京市自然科学基金资助项目(4042017)
关键词
ZNO薄膜
掺杂
p—n结
光致发光
ZnO thin film
doping
p - n junction
photoluminescence
