摘要
以正胶光刻和干湿刻蚀方法,结合CMOS工艺制备了聚酰亚胺电容型湿度传感器。研究了硅基、钼–铝栅条状电极湿度传感器的结构及亚胺化温度对其性能的影响。结果表明:相对湿度(RH)为20%～80%发生准静态变化时,该传感器的湿度–电容曲线具有较好的线性度;外界相对湿度在12%和92%间发生阶跃变化时,响应时间约为40s。
The capacitive type humidity sensor was prepared on isolated silicon substrate using standard CMOS process, in which a thin layer of polyimide was used as the humidity-sensing medium, and thin Mo-AI metal layers were used as the bottom and upper-electrodes. Dry etching and wet etching were employed for the formation of bottom-electrode contact window and upper-electrode pattern, respectively. The effects of structure of silicon substrate, Mo-Al grid-electrode humidity sensor and imidization temperature on their properties were studied. The results show that the sensor has better linearity in humidity-capacitance curve in the RH range of 20%-80%, and the response time is acceptably short （about 40 s, in RH of 12%-92%）.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第12期19-22,共4页
Electronic Components And Materials
