摘要
从理论和实验两个方面，分析了半导体激光器端面反射率变化对其输出功率的影响。研究结果表明：在对半导体激光器端面反射率进行优化后，能够获得最佳输出功率；此外，还分析了端面反射率优化后对半导体激光器微分功率特性的影响。
On both sides of theory and experiment, we analysed the influence of varity of reflectivity on end surface of semi-conductor laser with export power. Our researches show: that the test export power can be obtained after the optimization of reflectivity on end surface of semiconductor laser. By the way, we also analysed to have influence on the character of differential power of semiconductor laser after the optimigation.
出处
《河南科学》
1998年第4期429-432,共4页
Henan Science
