摘要
为定量研究变掺杂结构对阴极量子效率的作用效果,设计生长了两种不同掺杂方式的反射式梯度掺杂GaAs光电阴极,激活后测量了两者的光谱响应曲线。将光谱响应曲线转换为对应的量子效率曲线,对不同入射光波段的量子效率进行了拟合分析,得到了体现变掺杂结构贡献程度的变掺杂系数K值。研究发现,同一阴极材料对不同波段的入射光,其掺杂结构产生的作用效果各不相同。同时,不同掺杂结构光电阴极对于相同波段范围内的入射光,其作用效果也不相同。产生这些差别的根本原因,是由于不同掺杂结构下,材料中内建电场的位置和强度不同而造成的。该研究为评判不同掺杂方式下光电阴极的结构性能提供了有效的分析手段,对研究阴极变掺杂结构的优化设计具有非常重要的应用价值。
For a quantitative analysis of the effect of varied doping structure on the quantum efficiency of cathode,two kinds of reflective gradient doping GaAs photocathode samples were designed and grown respectively. After activation,the dynamic spectral response curves of the two samples were obtained. The spectral response curves were transformed into quantum efficiency curves. The quantum efficiency curves in different wavebands were fit,and the varied doping coefficient K that reflects the contribution of the varied doping structure to the cathode quantum efficiency was obtained. Results show that,the functional effects of the same material varied doping structure responding to the incident photon of different wavebands are different from each other. The same is true for the different material varied doping structures responding to the same waveband incident photon. The fundamental reasons for these differences are that the positions and the intensities of the inside electric fields which build within the materials under different varied doping structures are different from each other. It offers an effective analysis means to evaluate the structure performance of cathodes grown under different doping ways,and has great value for the study on optimization design of cathode varied doping structure.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
2009年第11期3007-3010,共4页
Spectroscopy and Spectral Analysis
基金
国家自然科学基金项目(60678043)
教育部高等学校博士点基金项目(20050288010)资助
关键词
GAAS光电阴极
变掺杂
内建电场
量子效率
GaAs photocathode
Varied doping
Built-in electric field
Quantum efficiency
