摘要
焦深大小将直接影响激光光刻加工的最细线宽和线条的边缘倾角从而影响被加工器件性能．传统的几何光学焦深概念对有光刻胶存在时的激光光刻已不适用．本文导出了会聚的高斯光束用于激光光刻时在光刻胶内的光场近似分布形式，由此可判断出光刻胶对光刻线条的分辨率和焦深的影响。
The smallest linewidth and line verge dipangle are directly affected by the depth of focus(DOF)in laser lithography and thus the quality of the elements produced by the laser lithography will be changed.The traditional concept of DOF in geometric optics in no more suitable for laser lithography.In this paper the light intensity distribution in the photoresist for laser lithography was derived out on the approximate assumption.According to this,the resolution of lithographic line in photoresist and DOF can by estimated and further a new conception of DOF was raised out.
出处
《光子学报》
EI
CAS
CSCD
1998年第10期890-895,共6页
Acta Photonica Sinica
基金
国防预研基金
