摘要
针对MOSFET散粒噪声难以测量的特点,提出了一种低温散粒噪声测试方法。在屏蔽环境下,将被测器件置于低温装置内,有效抑制了外界电磁波和热噪声的干扰,采用背景噪声足够低的放大器以及偏置器、适配器等,建立低温散粒噪声测试系统。应用本系统对短沟道MOSFET器件进行噪声测试,分析该器件散粒噪声的特性。
In view of the difficulty to measure shot noise in the short-channel MOSFET,this paper proposes a low temperature system,in which the device to be measured is put into a low temperature device in the shielding room in order to restrain the electromagnetic wave and thermal noise.The system adopts low noise amplifiers,adapters,and so on.Shot noise in the short-channel MOSFET is measured by this system with good results.
出处
《电子科技》
2009年第11期101-103,共3页
Electronic Science and Technology
基金
国家部委"十一五"预研基金资助项目(51312060104)
西安应用材料创新基金资助项目(XA-AM-200603)
关键词
散粒噪声
扩散电流
沟道噪声
低温装置
shot noise
diffuse current
channel noise
low-temperature device
