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联氨浓度对化学溶池沉积ZnS薄膜的影响 被引量:1

Effect of N_2H_4 concentration on ZnS thin film prepared by chemical bath deposition
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摘要 采用化学溶池沉积法在玻璃衬底上制备ZnS薄膜。为了解联氨在沉积过程中的作用,采用金相显微镜、XRD、nkd-薄膜分析系统对薄膜形貌、结构和光学性能进行分析。结果表明:随着联氨浓度的增加,衬底表面形核点数目增加,分布均匀,薄膜颗粒得到细化。结合Zn2+的络合前驱体、络合常数及其三元络合常数计算、氢键及空间位阻等方面的分析,认为会出现3种不同的络合前驱离子,分别为Zn(NH3)24+、Zn(NH3)x(N2H4)2y+、2+Zn(NH3)3。这些Zn2+的前驱体影响着衬底形核点的数目、分布与薄膜的均匀性。在适当条件下,联氨不再起辅助沉积的作用,而是与氨一起形成三元络合配位体系,共同参与沉积。通过改变联氨浓度,可以制备出在550~1000nm的波长范围内透过率达95%以上、反射率与透过率相对应、均匀平整的非晶薄膜。 ZnS thin films were deposited on glass substrates by chemical bath deposition(CBD) method.The morphological, structural and optical properties of ZnS thin films were investigated by optical microscope, XRD and nkd-spectrophotometer.The results show that with N2H4 concentration increasing, the number of active points on the surface of substrate is improved and the grain size of thin films becomes smaller.At the same time, the uniformity of active points of surface is improved.Combining the analysis of complex precursor of Zn2+, the stability constant of ternary complex and its calculation, hydrogen bond with steric crowding of complex, there are three major precursors, such as 2+ Zn(NH 3)4, Zn(NH3 )x(N2H4)2y+ and Zn(NH 3 )32+, which influence the number, distribution of active points and the uniformity of thin films with increasing N2H4 concentration.The appearance of Zn(NH3 )x(N2H4)2y+ means that hydrazine is not also a usual complementary agent, it becomes a complex precursor of Zn2+with amine.By changing the concentrations of N2H4, the uniform, smooth and un-crystal ZnS thin films, whose reflectivity is larger than 95% at the wavelength ranging from 550 nm to 1 000 nm and the reflectivity spectra correspond well with their transmission spectra, can be obtained.
出处 《中国有色金属学报》 EI CAS CSCD 北大核心 2009年第9期1706-1711,共6页 The Chinese Journal of Nonferrous Metals
基金 国家自然科学基金资助项目(50963003) 江西省教育厅青年科学基金资助项目(GJJ09566)
关键词 ZNS薄膜 化学水浴 联氨浓度 络合前驱体 ZnS thin film chemical bath deposition N2H4 concentration complex precursor
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参考文献16

  • 1KONNAGA M.Thin-film solar cells program in Japan[C]//Tech Dig Inter PVSEV-14.Bangkok,Thailland,2004:657-660. 被引量:1
  • 2VIDAL J,VIGAL O,de MELO O,LOPEZ N,ZELAA-ANGEL O.Influence of NH3 concentration and annealing in the properties of chemical bath deposited ZnS films[J].Mater Chem & Phys,1999,61:139-142. 被引量:1
  • 3KUNDU S,OLSEN L C.Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis[J].Thin Solid Films,2005,471:298-303. 被引量:1
  • 4NAKADA T,HONGO M,HAYASHI E.Band offset of high efficiency CBD-ZnS/CIGS thin film solar cells[J].Thin Solid Films,2003,431/432:242-248. 被引量:1
  • 5LEE J,LEE S,CHO S,KIM S.Role of growth parameters on structural and optical properties of ZnS nanocluster thin films grown by solution growth technique[J].Mater Chem & Phys,2002,77:254-260. 被引量:1
  • 6IBANGA E J,LE LUYER C,MUGNIER J.Zinc oxide waveguide produced by thermal oxidation of chemical bath deposited zinc sulphide thin films[J].Mater Chem & Phys,2003,80:490-495. 被引量:1
  • 7GODE F,GUMUS C,ZOR M.Investigations on the physical properties of the polycrystalline ZnS thin films deposited by the chemical bath deposition method[J].Journal of Crystal Growth,2007,299:136-141. 被引量:1
  • 8ROY P,OTA J R,SRIVASTAVA S K.Crystalline ZnS thin films by chemical bath deposition method and its characterization[J].Thin Solid Films,2006,515:1912-1917. 被引量:1
  • 9NAKADA T,MIZUTANI M,HAGIWARA Y,KUNIOKA A.High-efficiency Cu(In,Ga)Se2 thin-film solar cells with a CBD-ZnS buffer layer[J].Solar Energy Materials & Solar Cells,2001,67:255-260. 被引量:1
  • 10ENNAOUI A,EISELE W,LUX-STEINER M,NIESEN T P,KARG F.Highly efficient Cu(Ga,In)(S,Se)2 thin film solar cells with zinc-compound buffer layers[J].Thin Solid Films,2003,431/432:335-339. 被引量:1

同被引文献13

  • 1汤会香,严密,张辉,崔天峰,倪利红,杨德仁.不同络合剂对化学水浴法制备ZnS薄膜性能的影响[J].太阳能学报,2006,27(4):373-376. 被引量:7
  • 2Repins I, Contreras M, Romero Y, et al. Charac- terization of 19.9%-efficiency CIGS absorbers [J]. IEEE Photovoltaics Specialists Conference Record, 2008, 33. 被引量:1
  • 3Oladeji I O, Chow L, Liu J R, et al. Comparative study of CdS thin films deposited by single, contin- uous, and multiple dip chemical process [J]. Thin Solid Films, 2000, 359: 154-159. 被引量:1
  • 4Hui Zhang, Xiangyang Ma, Jin Xu J, et al. Direc- tional CdS nanowires fabricated by chemical bath deposition [J]. Journal of Crystal Growth, 2002, 246: 108-112. 被引量:1
  • 5Hubert C, Naghavi N, Roussel O, et al. The Zn (S,O,OH)/ZnMgO buffer in thin film Cu(In,Ga)(S,Se)2-based solar cells part I: fast chemical bath deposition of Zn(S,O,OH) buffer layers for indus- trial application on Co - evaporated Cu (In, Ga) Se2 and electrodeposited CuIn(S, Se) 2 solar cells [J]. Progress in Photovoltaics: Research and Applica- tions, 2009, 17: 470-478. 被引量:1
  • 6Contreras M A, Nakada T, Hongo M, et al. Proceedings 3ra world conference of photovoltaic energy conversion, osaka,Japan [C]. New York: IEEE, 2003 : 570. 被引量:1
  • 7Mandal S K, Chauhuri S, Pal A K. Optical proper-ty of nanocrystalline ZnS films prepared by high pressure magnetron sputtering[J]. Thin Solid Films, 1999, 350(1-2): 209-213. 被引量:1
  • 8Vidal J, O de Melo, Vigil O, et al. Influence of magnetic field and type of subtract on the growth of ZnS film by chemical bath[J].Thin Solid Films, 2002, 419(1-2): 118-123. 被引量:1
  • 9Zhang Hui, Ma Xianyang, Yang Deren. Effects of complexing agent on CdS thin films prepared by chemical bath deposition [J]. Materials Letters, 2003, 58(1): 5 -9. 被引量:1
  • 10Chaure N B, Young J, Samantilleke A P, et al. Electrodeposition of pin type CuInSez multilayers for photovoltaic applications [J].Solar Energy Ma- terials and Solar Cells, 2004, 81(1): 125-133. 被引量:1

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