摘要
采用渐变折射率分别限制单量子阱宽波导结构,通过降低非辐射复合、有源层载流子泄露、散射和吸收损耗来提高出射效率和降低激光阈值电流,从而提高半导体激光器阵列的输出功率;同时使P面具有更高的粒子掺杂数密度,优化N面合金条件,降低半导体激光器的串联电阻,降低焦耳热,提高了半导体激光器阵列的转换效率。利用金属有机化学气相淀积技术生长GaInAsP/InGaP/AlGaAs渐变折射率分别限制单量子阱宽波导结构激光器材料,利用该材料制成半导体激光线阵列在20%高占空比的输入电流下,半导体激光器的输出峰值功率达到189.64 W(180 A),斜率效率为1.1 W/A,中心波长为805.0 nm,阈值电流为7.6 A,电光转换效率最高可达55.4%;在1%占空比的输入电流下,阵列的输出峰值功率可达324.9 W(300 A),斜率效率为1.11 W/A,阈值电流为7.8 A,电光转化效率最高达55.6%,中心波长为804.5 nm。
808 nm high duty cycle high power semiconductor laser array was studied. Gradient refraction index separate confinement hetero structure single quantum well broad waveguide structure（GRIN-SCH-SQW-BW） was adopted to reduce the nonradiation compound, the active layer carrier leakage, and the scattering and absorption loss. Meanwhile, it enables high doping of the P side and optimization of N side alloy conditions, which reduce the laser diode series resistance, thereby reduce the joule heat and raise the output power of the laser diode, GaInAsP/InGaP/A1GaAs GRIN SCH-SQW-BW epilayers were grown by low pres- sure metal organic chemical vapor deposition（MOCVD） on N type GaAs substrate, laser diode array was fabricated using the ma- terial. The output power of laser diode array is up to 189.64 W at 180 A and 20% duty cycle, the slope efficiency is as high as 1.1 W/A, the central wavelength is 805.0 nm and the highest wall plug efficiency is 55.4% ; the output power of laser diode array is up to 324.9 W at 300 A and 1% duty cycle, the slope efficiency is as high as 1.11 W/A, the central wavelength is 804.5 nm and the highest wall plug efficiency is 55.6%.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2009年第11期1615-1618,共4页
High Power Laser and Particle Beams
基金
国防科技基础研究基金项目(61501060108)
吉林省科技厅发展计划项目(20075001
20086011)
