摘要
碳氮化合物（ＣＮ）是经理论预测的、硬度有可能超过金刚石的非天然共价化合物。该文使用反应离化团束（ＲＩＣＢ）方法，以低分子量聚乙烯为蒸发源材料，氮气为反应气体，在Ｓｉ（１１１）衬底上生长了ＣＮ薄膜。用激光喇曼（Ｒａ－ｍａｎ）散射分析了薄膜中的成键情况。结果表明，当氮气分压为１３．３ｍＰａ时，在波数１２４８ｃｍ－１附近出现源于共价Ｎ—Ｃ单键的喇曼峰，而且该峰强度随氮气分压的增加而增加。这个结果与Ｘ射线光电子能谱（ＸＰＳ）分析结果是一致的。硬度测定结果表明，生长的ＣＮ薄膜的努氏显微硬度最高可达６１ＧＰａ。在无润滑条件下进行滑动摩擦试验，测得的摩擦因数最低为～０．０８。
Carbon nitride compound was theoretically predicted to be harder than diamond. In this work, carbon nitride thin films were deposited by the reactive ionized cluster beam (RICB) technique on Si(111) substrates, using low molecular weight polyethylene as evaporation material and nitrogen as reactive gas. Raman measurements show the obvious existence of N—C single bonds in the film prepared with nitrogen pressure of 13.3mPa. Moreover, the intensity of this band rises with the increase of nitrogen pressure. These results are consistent with the results of X ray photoelectron spectroscopy (XPS) analysis. The films have rather high Knoop hardness up to 61GPa. Tribological tests indicate that the films deposited have low friction factor of about 0.08.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
1998年第10期13-15,共3页
Journal of Tsinghua University(Science and Technology)
基金
国家自然科学基金
中国科学院物理所光物理实验室资助
关键词
摩擦因数
碳氮化合物
硬质薄膜
reactive ionized cluster beam (RICB)
carbon nitride thin film
hardness
friction factor
