摘要
本文报道一种新开发的与Ｓｉ平面工艺兼容的准泡发射区基区工艺，以及由此工艺制备的适于大功率微波应用的ＳｉＧｅ异质结双极晶体管（ＨＢＴ）．ＳｉＧｅＨＢＴ的电流增益为５０，ＢＶＣＢＯ为２８Ｖ，ＢＶＥＢＯ为５Ｖ．在９００ＭＨｚ共射Ｃ类工作状态下，连续波输出功率５Ｗ，集电极转化效率６３％，功率增益７．４ｄＢ．
Abstract A quasi washed emitter base process compatible with Si process is developed, and the SiGe heterojunction bipolar transistor suitable for microwave power application is fabricated. The current gain of the SiGe HBT is about 50, the breakdown voltages of the collector junction and emitter junction are about 28V and 5V, respectively. In common emitter configuration and class C operation, the SiGe HBT with the continuous wave output power of 5W and collector conversion efficiency of 63% and power gain of 7 4dB was obtained at frequency of 900MHz.
关键词
异质结
双极晶体管
锗化硅
HBT
Etching
Heterojunction bipolar transistors
Sputtering
