摘要
研究了氧沉淀对直拉(CZ)硅单晶维氏硬度的影响。研究表明,在发生一定程度氧沉淀的情况下,硅单晶的硬度会由于氧沉淀导致的间隙氧浓度的降低而减小,此时间隙氧原子的固溶强化作用对硅单晶硬度具有显著的影响;而当氧沉淀足够显著时,由于氧沉淀的密度和尺寸较大,氧沉淀在硅单晶中的第二相强化作用得以显现,此时硅单晶的硬度不随间隙氧浓度的降低而减小,反而有较为显著的提高。
The effect of oxygen precipitation on Vickers hardness of Czochralski （CZ） silicon was investigated. When appropriate extent of oxygen precipitation appeared, the Vickers hardness of CZ silicon decreased with the reduction of interstitial oxygen concentration （ c [ Oi ] ）. But sufficiently significant oxygen precipitation would lead to the oxygen precipitates with high density and large size, the precipitation strengthening effect appeared, as a result, the Vickers hardness of CZ silicon did not decrease with further reduction of c[Oi] but increased to a certain extent.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2009年第5期758-761,共4页
Chinese Journal of Rare Metals
基金
国家自然科学基金重点项目(50832006)资助
关键词
单晶硅
氧沉淀
维氏硬度
mono-crystalline silicon
oxygen precipitates
Vickers hardness
