摘要
采用反应磁控溅射法在氧气和氩气比例为20∶100的混合气体中制备了非化学计量的氧化铋薄膜。薄膜分别在真空和空气中400℃退火30min。采用X射线光电子能谱(XPS)和X射线衍射(XRD)研究了薄膜在真空和空气中退火对其组成和结构的影响。分析表明,在真空退火条件下薄膜中的金属铋和次氧化铋发生了相变,金属铋晶粒长大;而在空气中退火时薄膜主要发生了金属铋和次氧化铋的氧化过程,得到了四方Bi2O3。
The nonstoichiometric bismuth oxide thin films were deposited by reactive DCmagnetron sputtering from a bismuth metallic target in a mixed Ar^＋ O2 gas with the relative O2 content 20%. Then the as-deposited thin films were annealed at 400℃ for 30 minutes in vacuum and air, respectively. The effects of the two different heat treatments on the composition and structure of the thin films were studied by means of X-Ray Photoelectron Spectroscopy （XPS） and X-ray diffraction （XRD）. The analysis reveals that the grain size of Bi embedded in the film increased and the phase transformation of Bi and BiO occurred during the heat treatment in vacuum. While for the annealing process in air, oxidation occurred in the composite thin films and tetragonal Bi2O3 was obtained.
出处
《信息记录材料》
2009年第5期3-7,共5页
Information Recording Materials
基金
国家自然科学基金资助项目(批准号:60644002)
