摘要
采用Cu箔对常压烧结的SiC陶瓷与TC4钛合金进行了接触反应钎焊,并对接头的微观组织、形成机理和室温强度进行了研究。结果表明,利用Cu箔可以在低于其熔点的温度实现SiC与TC4钛合金的连接。接头界面具有明显的层状结构,即由Ti-Cu-Si合金层、Ti-Cu合金层和富Ti的Ti-Cu-Al合金层组成。在1273K的条件下连接5min,接头室温剪切强度达到186MPa。
Non - pressure sintered SiC ceramic is bonded to TC4 titanium alloy by reaction brazing through copper coil. The microstructure and strength of the joint are investigated. The experimental results show that the bonding of SiC to TC4 can be accomplished by copper foil at the temperature lower than its melting point. Between SiC and TC4 occurs an interfacial structure which is composed of three alloy layers of Ti - Cu - Si, Ti - Cu and Ti - Cu - Al respectively. The shear strength of the joint bonded at 1273K for 5 min is up to 186 MPa at room temperature.
出处
《焊接》
EI
1998年第11期22-25,共4页
Welding & Joining
基金
国防科技术预研基金资助项目
