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Mg_2Si_(1-x)Sn_x(0≤x≤1)化合物的低温固相反应合成与热电性能研究 被引量:1

Low-temperature slid state reaction synthesis and thermoelectric properties of Mg_2Si_(1-x)Sn_x(0≤x≤1) solid solutions
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摘要 采用低温固相反应法结合放电等离子体烧结法(SPS)合成了Mg2Si1-xSnx(0≤x≤1)三元化合物,研究了Sn固溶量对化合物热电性能的影响。结果表明,随Sn含量增加,材料电导率增加,Seebeck系数减小;材料晶格热导率先减小后增加,x=0.4时化合物晶格热导率最低,同时固溶体化合物的晶格热导率远低于Mg2Si和Mg2Sn二元化合物的晶格热导率,在室温附近Mg2Si1-xSnx固溶体化合物的晶格热导率均约为Mg2Si的1/3和Mg2Sn的1/2;Mg2Si0.8Sn0.2化合物具有最好的热电性能,在640K获得最大热电优值0.16。 Mg2Si1-xSnx(0≤x≤1) Solid Solutions have been fabricated by the low-temperature solid state reaction and spark plasma sintering,and the influence of tin concentration on thermoelectric properties was investigated. Results indicated that the thermoelectric properties of Mg2 Si1-xSnx are sensitive to tin concentration. With the increases of tin content,the electrical conductivity increases while the absolute value of Seebeck coefficient decreases, and the lattice thermal conductivity first decreases, reaching a minimum value when x = 0.4, then increases with tin content further increases. The lattice thermal conductivity of Mg2 Si1-xSnx solid solution is considerably lower than the binary Mg2 Si and Mg2 Sn alloy, which is about one third and one half the value at room temperature for Mg2Si and Mg2Sn alloy,respectively. The highest dimensionless figure of merit reaches 0.16 at 640K for sample x=0.2.
出处 《功能材料》 EI CAS CSCD 北大核心 2009年第10期1640-1642,共3页 Journal of Functional Materials
基金 国家自然科学基金重点基金资助项目(50731006)
关键词 Mg2Si1-xSnx 低温固相反应 固溶 热电性能 Mg2 Si1-xSnx low-temperature solid state reaction solid solution thermoelectric properties
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