摘要
用热丝 CVD法 ,以甲烷、氮气和氢气为气源 ,在 Si( 1 1 1 )衬底上沉积了C- N薄膜。用 X射线光电子谱 ( xps)、喇曼光谱 ( RS)、X射线衍射 ( XRD)和扫描电镜( SEM) ,对 C- N薄膜的结构及生长速率进行了分析研究。结果表明 :C- N薄膜的结构为非晶态 ,同时含有金刚石和石墨相 ;氮以三种不同的化学键合状态存在于膜中 ,其中 β键合状态的结合能与晶态 β- C3N4的结合能接近 ;随混合气体中氮气含量增加 ,C- N薄膜的生长速率减小。
C N thin films have been deposited on si(111) substrate by hot filament Chemical vapour deposition in gas mixture of methane、nitrogen and hydrogen.The structures of C N thin films were analyzed by X ray photoelectron spectroscopy(XPS),Raman spectroscopy(RS),X ray diffraction(XRD)and scanning electron microscopy(SEM).The results indicate that the structure of C N films is amorphous with diamond and graphite phases. The incorporated nitrogen exists in three different forms of chemical bonds to C N films.Among them,the binding energy of β bond is close to the one of β C 3N 4 crystalline.The speed of growing of C N films decreased with increasing of nitrogen content in mixture gas.
出处
《微细加工技术》
1998年第3期72-78,共7页
Microfabrication Technology
