摘要
本文用Ｔｉ箔在１３２３Ｋ直接进行Ｓｉ３Ｎ４／Ｎｉ的真空连接。结果表明，通过Ｎｉ、Ｔｉ之间的相互扩散形成的液体合金与Ｓｉ３Ｎ４发生界面反应，形成Ｓｉ３Ｎ４／ＴｉＮ／Ｔｉ５Ｓｉ３＋Ｔｉ５Ｓｉ４＋Ｎｉ３Ｓｉ（混合层）的接合界面，ＴｉＮ层和混合层的生长均符合抛物线规律，生长因子分别为１．３×１０－８ｍｓ－１／２和７．４×１０－８ｍｓ－１／２。接头弯曲强度随连接时间的增加、即Ｓｉ３Ｎ４／ＴｉＮ界面的连续和致密化而显著提高。而过厚的反应层会导致在近界面陶瓷中产生微裂纹，降低接头强度。
Bonding of Si 3N 4 to Ni was performed with Ti foil directly at 1323K under a vacuum condition. It was shown that through the interdiffusion of Ti and Ni, Ti-Ni liquid alloy was formed on the surface of Si 3N 4 and reacted with Si 3N 4 at the interface, forming a joining interface with Si 3N 4/TiN/Ti 5Si 3+Ti 4Si 4+Ni 3Si. The growth of both TiN layer and the mixed layer was found to be in conformity with the parabola rule, and the growth constants were 1.3×10 -8 ms -1/2 and 7.4×10 -8 ms -1/2 respectively. Four point bending strength increased with the increase of bonding time, or with the continuation and the compactness of the Si 3N 4/TiN interface. However, microcreacks in Si 3N 4 ceramic near the interface would emerge when the reaction layer became too thick, whick decreased the joint strength.
出处
《硅酸盐通报》
CAS
CSCD
1998年第4期48-52,共5页
Bulletin of the Chinese Ceramic Society
