摘要
作为一种禁带宽度可调的半导体,碲镉汞(MCT)至今仍是一种最有效的可在较宽波长(1～25μm)范围内工作的红外探测器。由于材料性质敏感,MCT器件的制备一直是一项具有挑战性的工作。有若干种pn结制备方法可用于制备MCT光伏器件。离子注入是最常用的一种,但该方法需要额外的退火处理。一些替代技术,例如离子束研磨或反应离子刻蚀等,近来年引起较多关注。MCT体晶和外延层的导电类型转换是材料生产和器件制备中最重要的工艺之一。通过对近年来部分英语期刊文献的归纳分析,介绍了MCT pn结制备技术的研究进展。
As one of the tunable bandgap semiconductors, mercury cadmium telluride （MCT） is by far the most efficient infrared detectors that operate in a wide wavelength range （ from 1 to 25 p.m）. The fabrication of MCT devices has always been a challenging task due to sensitive nature of the material. Several pn junction fabrication methods are known to make MCT photovoltaic devices. Ion implantation is the most popular one, but it needs additional thermal annealing pr3cess. Some alternative technologies, such as ion beam milling or reactive ion etching, have received considerable attention in recent years. Type conversion of conductivity in MCT crystals and epitaxial layers is one of the most important processes involved into material production and device fabrication. By summarizillg and analyzing some of related papers published in English journals, this paper presents an overview of developments for pn junction fabrication technologies based on MCT over the last few years.
出处
《红外技术》
CSCD
北大核心
2009年第9期497-503,共7页
Infrared Technology
关键词
碲镉汞
PN结
光电二极管
焦平面阵列器件
红外探测器
mercury cadmium telluride
pn junction
photodiode： focal plane array device
infrared detector
