摘要
在各种化学蒸气沉积生长排列整齐的纳米材料的合成方法中,阳极三氧化二铝(AAO)模板被广泛采用主要由于容易通过电压和阳极氧化时间来控制其孔径.这里,我们表征存在/不存在催化剂时生长在AAO模板上的碳纳米管和氧化物材料的生长机理.我们还研究了在合成密集整齐排列的纳米结构生长过程中氢气的还原效应.实验结果显示AAO模板本身促进Ga2O3VS生长机理,氧化物催化剂氢化还原提高了碳纳米管的生长速率和结晶度.氢化还原中使用AAO模板可以很好地控制排列整齐的纳米材料的直径和密度.
Among various synthesis methods for aligned nanostructure materials growth using chemical vapor deposition （CVD）, an anodic aluminum oxide （AAO） template has been widely use because of its easy controlling of pore diameter by voltage and anodized time. In this study, we characterized growth mechanism of carbon nanotubes and oxide nano-materials on AAO template with/without catalyst. Also, we investigated reduction effects of hydrogen gas in the synthesis processes for well aligned and densely grown nanostructures. Those experimental results showed that AAO template itself ignited VS growth mechanism for Ga2O3, and hydrogen reduction of oxide catalysts improved the growth rate and crystallinity of CNTs. Using AAO template with hydrogen reduction, we can control the diameter and density of well aligned nanostructure materials.
出处
《吉林师范大学学报（自然科学版）》
2009年第3期11-15,共5页
Journal of Jilin Normal University:Natural Science Edition
