摘要
The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/（V·s）, the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio （Ion/Ioff） is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation （2.5 μW/cm2） exhibit punch-through and threshold voltage （Vth） shift （from-0.6 V to ＋0.7 V） and a decrease by almost half of the source-drain current （Ids, from 560 nA to 320 nA） due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
The fabrication and photoelectrical characteristics of suspended ZnO nanowire （NW） field-effect transistors （FETs） are presented. Single-crystal ZnO NWs are synthesized by a hydrothermal method. The fabricated FETs exhibit excellent performance. When Vds=2.5 V, the peak transconductance of the FETs is 0.396 μS, the average electron mobility is 50.17 cm2/（V·s）, the resistivity is 0.96 × 102 Ω·cm at Vgs = 0 V, and the current on/off ratio （Ion/Ioff） is approximately 105. ZnO NW-FET devices exposed to ultraviolet radiation （2.5 μW/cm2） exhibit punch-through and threshold voltage （Vth） shift （from-0.6 V to ＋0.7 V） and a decrease by almost half of the source-drain current （Ids, from 560 nA to 320 nA） due to drain-induced barrier lowering. Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
基金
supported by the State Key Development Program for Basic Research of China(No.2002CB311901)
the Director Fund of the Institute of Microelectronic of the Chinese Academy of Sciences (No.O8SB034002)
the Pre-Research Fund of Weap on Equipment (No.6150105040)
