摘要
运用Monte Carlo模拟方法计算了ZnS材料的高场电子输运特性。采用非抛物面多能谷模型描述ZnS材料的导带能带结构,该能带结构包含导带的两个能量子带。模拟中电子的散射机制包括声学声子散射,极性光学声子散射,能谷间散射,电离杂质散射和碰撞电离散射等。模拟高场下电子输运特性,碰撞电离是必需考虑的散射机制。模拟计算得到了ZnS材料的电子平均漂移速度、平均电子能量、电子能谷占据数随电场强度变化的关系,以及碰撞电离率随电子平均能量变化的关系。模拟结果与全带Monte Carlo模拟得到的结果吻合得较好,但非抛物线多能谷模型比全带模型计算更简单。
The electronic high-field transport properties of the bulk ZnS have been calculated by Monte Carlo approach. The non-parabolicity multi-valley model is used to describe the conduction band structure of ZnS, in which two energy sub-bands are included. Several scattering mechanisms are included such as acoustic phonon scattering, polar optical phonon scattering, intervalley scattering, ionized impurity scattering, and impact ionization scattering. Among these scattering mechanism, impact ionization plays important role in the high field transport of the bulk ZnS. The characteristics of drift velocity-field, average energy-field, electron vallay population of ZnS materials are obtained by Monte Carlo calculations, and the dependence of impact ionization rates on electronic energy is also obtained. The results for non- parabolicity multi-valley model obtained by these calculations agree well with the results for fullband model obtained by other authors. The calculations for non-parabolicity multi-valley mode are simpler than for the full-band model.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第4期546-549,共4页
Semiconductor Optoelectronics
基金
河北省教育厅科学研究计划项目(2008308)
