摘要
采用直流对靶磁控溅射低价态氧化钒(VO2-x)薄膜再附加热氧化处理的方式,进行具有金属-半导体相变特性氧化钒薄膜的制备。采用X射线光电子能谱(XPS)、X射线衍射(XRD)和原子力显微镜(AFM)对薄膜中钒的价态与组分、薄膜结晶结构和表面微观形貌进行分析,利用热敏感系统对薄膜的电阻温度特性进行测量。结果表明:新制备的低价态氧化钒薄膜以V2O3和VO为主,经过300℃低温热氧化处理后,薄膜中出现单斜金红石结构的VO2相,薄膜具有金属-半导体相变特性;薄膜表面颗粒之间存在间隙,利于氧的渗入;在300～320℃进行热处理时,薄膜中的V2O3和VO向单斜结构的VO2转变,VO2含量增加,随着薄膜内VO2含量的增加,薄膜的金属-半导体相变幅度增大,超过2个数量级,相变性能变好,但是此热处理温度区间对已获得的VO2的结构没有影响。同时利用直流对靶磁控溅射方法还可以在低氧化温度下获得具有优异金属-半导体相变特性的氧化钒薄膜,制备工艺与微机械电子系统(MEMS)工艺相兼容。
Vanadium oxide thin films were deposited by reactive direct current facing targets magnetron sputtering, and then processed in oxygen ambience to fabricate phase transition vanadium oxide thin films. X-Ray Photoelectron Spectroscopy（XPS）, X-Ray Diffraction（XRD） technique and Atom Force Microscope（AFM） were employed to study and analyze the phase composition, structure of crystalline units of the thin films and surface morphology. The resistance-temperature property was also measured. The results show that the phase composition of as-deposited thin film changed from V20~ and VO to VO2 when annealing at 300 ℃ ; the grains on surface are incompact and it is useful for oxygen infiltration to oxidate VOx thin films. The structure of VO2 oxidated from V203 and VO is monoclinic rutile structure processed between 300-320 ℃, the magnitude of metal-semiconductor transition increases to 2 with increasing of VO2 in thin films. All the results reveal that metal-semiconductor transition vanadium oxide thin films can be obtained by reactive direct current facing targets magnetron sputtering at low thermal processed temperature.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2009年第7期1203-1208,共6页
Rare Metal Materials and Engineering
基金
天津市自然科学基金面上项目(043600811)
天津市应用基础及前沿技术研究计划重点项目(08JCZDJC17500)
关键词
相变氧化钒薄膜
低温热氧化
直流对靶磁控溅射
phase transition vanadium oxide thin films
low temperature thermal oxidation
direct current facing targets magnetron sputtering
