期刊文献+

Zr-Cu Amorphous Films Prepared by Magnetron Co-sputtering Deposition of Pure Zr and Cu 被引量:4

Zr-Cu Amorphous Films Prepared by Magnetron Co-sputtering Deposition of Pure Zr and Cu
下载PDF
导出
摘要 ZrxCu100-x amorphous films are prepared on Si (111) substrates by magnetron co-sputtering of pure Zr and Cu. It is found that the glass forming ability (GFA) of the films increases with x when x is in the range from 35 to 65 and with the best glass forming ability at x = 65. It is therefore different from the bulk counterparts, for which only x = 35 and 50 were reported to have high glass forming ability during casting. The structure of the films is sensitive to the substrate temperature and the sputtering argon pressure. ZrxCu100-x amorphous films are prepared on Si (111) substrates by magnetron co-sputtering of pure Zr and Cu. It is found that the glass forming ability (GFA) of the films increases with x when x is in the range from 35 to 65 and with the best glass forming ability at x = 65. It is therefore different from the bulk counterparts, for which only x = 35 and 50 were reported to have high glass forming ability during casting. The structure of the films is sensitive to the substrate temperature and the sputtering argon pressure.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2009年第8期227-229,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 50731005, 50774006 and 50821001, the National Basic Research Program of China under Grant Nos 2006CB605201 and 2007CB616915, and the Programme for Changjiang Scholars and Innovative Research Team in University (PCSIRT) under Grant No IRT0650.
  • 相关文献

参考文献23

  • 1Clement W, Willens R H and Duwez P 1960 Nature 187 869. 被引量:1
  • 2Wang W H, Dong C and Shek C H 2004 Mater. Sci. Eng.R 44 45. 被引量:1
  • 3Jing Q, Zhang Y, Wang D et al 2006 Mater. Sci. Eng. A 441 106. 被引量:1
  • 4Kramer J 1937 Physica 106 675. 被引量:1
  • 5Amato J C 2004 Appl. Phys. Lett. 85 103. 被引量:1
  • 6Wang Y T, Xi X K, Fang Y K et al 2004 Appl. Phys. Lett. 85 5989. 被引量:1
  • 7Lee H J, Ramirez A G 2004 Appl. Phys. Lett. 85 1146. 被引量:1
  • 8Tang M B, Zhao D Q, Pan M X et al 2004 Chin. Phys. Lett. 21 901. 被引量:1
  • 9Wang D, Li Y, Sun B Bet al 2004 Apps. Phys. Lett. 84 4029. 被引量:1
  • 10Yu P, Bai H Y and Wang W H 2006 J. Mater. Res. 21 1674. 被引量:1

同被引文献32

引证文献4

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部