摘要
AlN材料具有良好的压电特性和很高的声波速度,是制作性能优良薄膜体声波器件的首选材料之一。对氮化铝薄膜体声波谐振器原理进行了分析,探讨了氮化铝薄膜体声波谐振器的设计方法,在制备高c-轴取向氮化铝薄膜的基础上,通过上电极和氮化铝薄膜一次光刻两步刻蚀工艺方法制作了1.6 GHz氮化铝薄膜体声波谐振器,并探讨了谐振器的频率影响因素。
A1N posses good piezoelectric characteristic and high acoustic wave velocity, it is one of the first choosing materials for high quality thin film acoustic wave devices. This work analyses the principle of A1N thin film acoustic wave resonator and the design method. Based on high c-axis orientational A1N films fabrication and using an one-step photolithography and reactive etching method, a 1.6 GHz A1N thin film acoustic wave resonator is made and some useful frequency control method is discussed.
出处
《武汉理工大学学报》
CAS
CSCD
北大核心
2009年第13期22-25,共4页
Journal of Wuhan University of Technology
基金
武汉理工大学校基金(XJJ2004112)
关键词
薄膜体声波谐振器
c-轴取向
反应刻蚀
thin film acoustic wave resonator
c-axis orientation
reactive etching
