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IrDA中高增益CMOS共栅前置放大器

A High-Gain CMOS Common-Gate Preamplifier for IrDA
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摘要 提出了一种应用于IrDA的高增益CMOS共栅前置放大器。与传统的共源共栅结构不同,该电路采用宽摆幅共源共栅作负载以获得高增益。从理论上对电路的可行性进行了分析,采用CSMC 0.6μm CMOS工艺的仿真结果表明该电路具有110.3dBΩ的增益,105kHz的带宽,电路功耗仅为200μW。 This paper presents a novel high - gain CMOS common - gate preamplifier for wireless infrared communications. Instead of conventionally used resistor as load,it utilizes cascode to realize high gain(about 110.3dBΩ). A theoretical analysis is made on this circuit. Simulation results using the 0.61μm CMOS process of CSMC show that the gain is 110.3dBΩ,the bandwidth is 105kHz,and the power consumption is only 200μW.
出处 《微处理机》 2009年第3期20-22,26,共4页 Microprocessors
关键词 IrDA红外通讯 互补金属氧化物半导体CMOS 共栅 前置放大器 高增益 IrDA CMOS Common - gate Preamplifier High - gain
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参考文献5

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