摘要
利用共沉淀方法合成了Nb掺杂SnO2材料,通过X射线衍射分析了材料的相组成,利用电阻-温度特性测试仪研究了材料的电阻温度特性,并利用半导体热力学理论分析了材料的NTC机理。结果表明,600℃煅烧能获得高纯的四方结晶相掺杂SnO2,粉体晶粒平均尺寸为10.5nm;Nb掺杂SnO2体现出良好的电阻负温度系数(NTC)效应,材料常数为3662K。
Nb-doped SnO2 is prepared by a eopreeipitation method. The analysis of X-ray diffraction shows that the pure tetragonal phase of doped SnO2 with the average grain size of 10. 5nm is obtained after calcination at 600℃. The mechanism for NTC characteristic of Nb-doped SnO2 ceramics is discussed by thermodynamics theory of semiconductor. The measurements of the temperature dependence of resistance reveal that Nb-doped SnOz ceramics show an obvious negative-temperature-coefficient（NTC） effect and have the material constant of 3662K.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2009年第12期14-16,共3页
Materials Reports
基金
高校博士点专项科研基金(20070533119)
湖南省科技计划博士后科研资助专项(2008RS4015)
关键词
氧化锡
掺杂
导电性
负温度系数效应
tin oxide, doping, conductivity, negative-temperature-coefficient effect
