摘要
20世纪60年代理论预言金属-半导体转变,但在随后的30年间实验研究未获进展,直到20世纪90年代才取得了飞速发展。Ⅳ族金属元素Sn、Pb和Ⅴ族金属元素Sb、Bi的外延膜先后观察到了金属-半导体转变,并提出了"空穴导电"模型,取代以往的"电荷中性"模型。在超细金属微粒的研究上,由于金属能带转变为半导体禁带能隙结构,发现了很多相应的、与块状金属不同的光、电、磁、热、力学和化学特性,有力地推动了学科的发展。
The possibility of a metal to semiconductor transition was theoretically predicated over 30 years ago, however, the transition had never been experimentally identified before 1990. The metal-semiconductor transition in Sn, Pb, Sb and Bi uhrathin films were discoveried in the last 20 years, and a hole conductivity model was provided instead of the charge neutral model. A transition of metal energy band to semiconductor one in nanometal particles arouses a lot of new properties different from the relative bulk materials in optics, electronics, magnetics, thermodynanics, mechanics and chemistry, which will promote progress of science and tehnology.
出处
《科学技术与工程》
2009年第15期4398-4405,共8页
Science Technology and Engineering
关键词
金属-半导体转变
量子尺寸效应
空穴导电模型
纳米效应
metal-semiconductor transition quantum size effects hole conductivity model nanostructured effects
