摘要
根据多碱光电阴极制备过程中的光谱响应在０．４～０．５μｍ之间光电流减少这一事实，分析了Ｃｓ处理多碱光电阴极的厚度。结果表明：第一次Ｃｓ处理，０．４μｍ处的光电流由６ｍＡ／Ｗ下降到３．８ｍＡ／Ｗ，第二次处理进一步降至１．６ｍＡ／Ｗｑ其主要原因是Ｃｓ处理形成的Ｋ２ＣｓＳｂ具有一定厚度，光电子在输运过程中由于厚度增加导致散射几率增加，逸出几率下降，从而导致光电发射下降。在Ｓｂ、Ｃｓ交替后，计算结果表明，曲线８与曲线５相比，厚度增加了３ｎｍ。
By means of investigating spectral response of Na 2KSb(Cs) during its preparation, the fact that photoelectric current decreases in 0.4～0.5 μm spectra region is supported. The thickness of photocathode is analyzed. This conclusion shows that the photoelectric current decreases from 6 mA/W to 3.8 mA/W for the first cesium processing and tp 1.6 mA/W for the second one dectreases. The main reason is that K 2CsSb caused by cesium processing has definite thickness to increase scattering probability and decrease of escaping probability which cause the decrease of photoelectric emission. After processed with stibium and cesium in turns, calculations indicate that the thickness has increased 3 nm according to the curve 8 decreases by 3 nm comparing with the 5 th one.
出处
《红外技术》
CSCD
北大核心
1998年第4期16-18,共3页
Infrared Technology
关键词
多碱光电阴极
光谱响应
阴极厚度
层状模型
Multialkali photocathode Spectral response Photocathode thickness Layer model
