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Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
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摘要 This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler London method. This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show "binding" and "antibinding" properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler London method.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第6期2258-2263,共6页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundations of China (Grant Nos O69C041001 and 2007CB924904)
关键词 biexcition binding energy single quantum dots exciton molecular model Heitler-London method biexcition binding energy, single quantum dots, exciton molecular model, Heitler-London method
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参考文献27

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